As the feature size of silicon-based integrated circuits (ICs) approaches the physical limit, short-channel effects appear, gate control attenuates, and leakage current increases, which seriously affects transistor performance and causes chip failure. Due to the inherent thickness of bulk silicon, the physical area cannot be further reduced, which restricts the area efficiency of silicon-based ICs. In addition, the speed mismatch between memory readout and logic operation, and the separation of memory and computing units together form the memory wall bottleneck in silicon-based ICs. With unique characteristics, including no dangling bond surface, atomic-level thickness, abundant adjustable energy bands, excellent optical electrostatic properties etc., two-dimensional (2D) materials have the potential to enhance gate control, reduce leakage, improve energy and area efficiency, and realize the integration of perception, memory and computing. This report discusses the roadmap for the fusion of 2D materials and silicon ICs, including alleviating the problems faced by silicon ICs from the application of 2D materials in gate-all-around, memory and logic transistors, and enabling the creation of an all-in-one sensing, memory and computing system. Finally, it provides an outlook on the challenges and promising paths to fusing 2D materials with silicon ICs for large-scale applications.

报告人简历：周鹏，教授，博士生导师。1979年出生于河北省盐山县。复旦大学微电子学院副院长，获2020年上海市青年科技杰出贡献奖和自然科学二等奖。于2000年、2005年分别获复旦大学物理学学士和博士学位。2006-2007年在首尔国立大学Inter-大学半导体高级研究中心任访问学者。研究方向主要从事集成电路新材料，新器件及新机理，高速非易失性存储器，存算融合新器件新机理等。主持了国家重大专项、重点研发计划、自然科学基金、上海市科技创新重点项目等。在Nature Nanotechnology，Nature Electronics，Advanced Materials，IEEE Electron Device Letters等发表第一作者及通信作者论文200余篇。组织和受邀国内外学术会议40余次，包括Nature Conference Keynote报告以及中美华人纳米会议邀请报告。担任中国真空学会常务理事，中国物理学会半导体专业委员会委员，Infomat副主编。