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多组元材料的结构筛选和硼-碳体系的材料预测
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报告题目:
Physics of Quantum dot devices
 报告人:
张亚中 教授
台湾中研院应用科学研究中心主任
报告时间:
2006-10-26 16:15
报告地点:
理学院报告厅
主办单位:
物理系
  简介:
Physics and theoretical modeling of quantum dot devices such as single-electron transistors (SETs), single-photon generators (SPGs), quantum-dot infrared detectors (QDIPs), and nanoparticle biosensors will be discussed. The theoretical modeling involves ab intio calculations using symmetrized basis and efficient semi-empirical model calculations as well as transport calculations based on non-equilibrium Green's function method. Physical phenomena such as electron tunneling, Coulomb blockade, optical excitation, and photo-assisted transport in these devices will be explored.
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