报告题目: |
Gate controlled non-volatile graphene ferroelectric memory and spin injection into graphene via MgO barriers |
报告人: |
Barbaros ?zyilmaz |
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报告时间: |
2009-07-08 16:00 |
报告地点: |
物理系三楼报告厅 |
主办单位: |
物理系 |
简介: |
报告摘要：I will show non-volatile switching in graphene by using ferroelectric gating
without having to break the lattice symmetry. We demonstrate basic writing and reading processes of a novel
graphene-ferroelectric memory device structure combining the field dependent conductance of graphene with the
remnant electric field of ferroelectric thin films. A bistable state of high and low resistance value is realized
by controlling the electrical doping level in graphene hysteretically, which is caused by a hysteretic switching
of the polarization in the ferroelectric thin-film. Our approach of ferroelectric gating also open up the
possibility of studying graphene phenomena in the limit of high carrier concentration, which is not possible with
dielectric gating.
I will also report on our resent results on spin transport in graphene observed in the non-local device geometry.
Here we have used MBE grown MgO as a tunneling barrier.
报告人简介：Barbaros OZYILMAZ
Ph.D. (New York University)
Assistant Professor
Physics Department, NUS
2 Science Drive 3
Singapore 117542
Office: S13-02-10
Tel: (65)-6516-6979
Fax: (65)-6777-6126
Email: phyob@nus.edu.sg; http://staff.science.nus.edu.sg/~barbaros/
Selected Publications:
Electronic transport and quantum Hall effect in bipolar graphene p-n-p junctions, B. ?zyilmaz, P.
Jarillo-Herrero, D. Efetov, D. A. Abanin, L. S. Levitov, Phys. Rev. Lett. 99, 166804 (2007).
Current Induced Excitations in Cu/Co/Cu Single Ferromagnetic Layer Nanopillars, B. ?zyilmaz, A. D. Kent, J. Z.
Sun, M. J. Rooks and R. H. Koch., Phys. Rev. Lett., 93, 176604 (2004).
Current-Induced Magnetization Reversal in High Magnetic Fields in Co/Cu/Co Nanopillars, B. ?zyilmaz, A. D. Kent,
D. Monsma, J. Z. Sun, M. J. Rooks, and R. H. Koch., Phys. Rev. Lett., 91, 067203 (2003). |
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