报告题目: |
Overcoming the doping bottleneck in wide-gap semiconductors |
报告人: |
Su-huai Wei |
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NREL, Golden
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报告时间: |
2008-07-10 15:00 |
报告地点: |
物理系三楼报告厅 |
主办单位: |
物理系 |
简介: |
报告摘要：Application of semiconductors as electric and optoelectronic devices depends critically on their dopability. Failure to dope a material, i.e., to produce enough free charge carriers beyond a certain limit, is often the single most important bottleneck for advancing semiconductor-based high technology. Using the first-principles band structure method, we have studied systematically the general chemical trends of the defect formation and ionization in semiconductors to understand the physical origin of the doping difficulty. New approaches to overcoming the doping limit have been developed. |
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