Degradation of hexagonal silicon carbide-based bipolar devicesM. Skowronski Department of Materials Science and Engineering, Carnegie Mellon UniversitySilicon carbide displays multiple characteristics that make it ideally suited for efficient high voltage switching devices.  However, the commercialization of this technology has been hampered by degradation of SiC p-n junctions due to the expansion of Shockley-type stacking faults.  The faults gradually cover most of the junction area and impede current flow. This talk will cover the properties of faults in hexagonal SiC polytypes and their bounding dislocations as well as the mechanism and driving force for fault expansion.  The approaches to materials growth and processing leading to elimination of this effect will be discussed. 

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