报告摘要：Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) have demonstrated excellent electrical characteristics over an extremely wide temperature range, from as low as below 1K to as high as well over 400K. This, together with multi Mrad radiation hardness, makes SiGe BiCMOS an excellent candidate for developing integrated electronics for outer space exploration. We describe in this talk the development of a wide temperature range SiGe HBT compact model that enables integrated circuits design from 43 K to 393 K, based on the industry standard Mextram model.

报告人简介：Guofu Niu (M'97-SM'02) received the B.S., M.S. and Ph.D. degrees in Electrical Engineering, all from Fudan University, Shanghai, China, in 1992, 1994, and 1997, respectively. From 1995 to 1997, he was a research assistant at City University of Hong Kong. Since 1997, he has been with Auburn University, and is currently Professor of Electrical and Computer Engineering. His research activities include compact modeling, SiGe devices, RF CMOS, RF / Microwave measurement techniques, radiation effects, low temperature electronics, wide bandgap devices, and TCAD. He has published more than 100 journal papers and more than 100 conference papers, is the co-author of the book Silicon-Germanium Heterojunction Bipolar Transistors, and the author of several book chapters. Since 2015, he has been the developer of Mextram, an industry standard bipolar transistor compact model. Dr. Niu has served on the committees of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting (2002-2010), the IEEE Nuclear and Space Radiation Effects Conference (devices and integrated circuits chair in 2002), the IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (2004-present, program chair in 2007, general chair in 2009), the ECS SiGe Materials, Processing and Devices Symposium (2004-present). He has regularly served as a reviewer for many journals, including IEEE Transactions on Electron Devices, IEEE Electron Device Letters, IEEE Transactions on Microwave Theory and Techniques, and IEEE Transactions on Nuclear Science.

主请人联系方式：

孟  萃   62771962   mengcui@tsinghua.edu.cn