报告摘要：Based on AlGaAs/GaAs heterojunction, a 2DEG (Two dimensional Electron Gas) with high electron mobility at low temperature can be obtained and used to investigate quantum transports of electrons at low temperature in mesoscopic physics. Beyond the basic research, we used a 2DEG and the QPC (Quantum Point Contact) configuration to demonstrate a fully ballistic FET (Field-Effect Transistor) at 4.2 K and the experimental result is confirmed by the simulation, using Landauer-Buttiker formalism from the mesoscopic physics. The know-how in mesoscopic devices and ballistic FET under cryogenic conditions allowed us to realize specific cryoHEMTs (cryogenic High Electron Mobility Transistors) and to decrease their noise voltage and noise current to the range of sub-nV/Hz1/2 and of aA/Hz1/2, respectively. Indeed, these HEMTs are in the process of filling a gap in high impedance and low-frequency deep cryogenic readout electronics and few applications will be demonstrated. Up to date, we have supplied few hundreds cryoHEMTs to UC Berkeley (for Dark Matter search experiment), CEA (France), Stahl Electronics (Germany company), and academic laboratories in the world.

报告人简介：Yong JIN received the B.S. degree in physics from the Fudan University, Shanghai, in 1981; the M.S. and the Ph.D degrees in solid state physics from the "Université Pierre et Marie Curie", Paris, in 1983 and 1986, respectively. In 1988, he joined the French "Centre National de la Recherche Scientifique" and became research director in 2006. He has developed specific process for realizing nanostructured field-effect devices for fundamental and applied physics. His current research interests include quantum coherent mesoscopic circuits, a new generation of ultra-low noise HEMTs for low frequency high impedance deep cryogenic readout electronics and nano-Schottky diodes for sub-THz and THz space electronics.

主请人联系方式：
邓智   62771961   dengz@tsinghua.edu.cn