报告摘要： Molybdenum disulfide (MoS₂) has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic  applications. However, demonstrating  electron spin transport through  a semiconducting MoS₂ channel is challenging. Here we evidence the electrical spin injection and detection in a multilayer MoS₂ semiconducting channel with a two-terminal spin-valve measurement. A magnetoresistance  (MR) around 1% has been observed at  low temperature through a  450 nm long,  6 monolayer  thick channel with a  Co/MgO spin injector and  detector. From a systematic study of the bias voltage, temperature and back-gate voltage dependence of MR, it is found that keeping a good balance  between  the interface resistance and channel resistance  plays a key role for the observation of the two-terminal MR. Moreover, the electron spin-relaxation  is found to be  greatly suppressed in the multilayer  MoS₂ channel with in-plan spin injection. The underestimated long spin diffusion length (~235nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.

报告人简介： Yuan LU is a research staff working in CNRS in France since 2008. He received his B.S. degree from Tsinghua University in 1999, and his Ph.D degree in material science from Institute of Semiconductor (CAS) in 2004. Then he worked as a post-doc fellow in University of Rennes and Unite Mixté CNRS/THALES in France from 2004 to 2007 before obtaining his permanent position in  CNRS in 2007. In 2010, he worked as a visiting researcher  in University of Maryland (USA). The research  aeras of Dr. Lu  focus on magnetic tunnel junctions and spin-injection and detection in semiconductors.  He has more than 50 publications ininternational  journals (1 Adv.Mat., 3 Phys.Rev.Lett.,  13 Appl.Phys.Lett., 4 Phys.Rev.B) and served as  referee for journals of Adv.Mat.,  Appl.Phys.Letts, J.Appl.Phys., Phys.Status Solidi and Surface and Coating Technology.