简介: |
The formation of a two-dimensional electron gas (2DEG) at the interface between two complex oxides has sparked huge interest in oxide electronics. In spite of more than a decade of research, many fundamental aspects, including the mechanisms that determine the density of this 2DEG, are still imperfectly understood. We have used hybrid density functional theory to elucidate fundamental materials properties and calculate key parameters for heterojunctions. I will discuss Mott-Hubbard gaps of rare-earth titanates, the formation and excitation of small hole polarons, and how confinement effects in thin SrTiO3 layers can trigger a metal-insulator transition.
Work performed in collaboration with L. Bjaalie, L. Gordon, B. Himmetoglu, A. Janotti, A. Verma, S. Raghavan, D. Jena, D. G. Ouellette, P. Moetakef, T. A. Cain, S. J. Allen, and S. Stemmer, and supported by NSF, SRC/DARPA, ARO, and ONR.
个人简介：Chris Van de Walle is the inaugural recipient of the Herbert Kroemer Endowed Chair in Materials Science at the University of California, Santa Barbara. Prior to joining UCSB in 2004, he was a Principal Scientist at the Xerox Palo Alto Research Center (PARC). He received his Ph.D. in Electrical Engineering from Stanford University in 1986, and was a postdoctoral scientist at the IBM T. J. Watson Research Center in Yorktown Heights, New York (1986-1988) and a Senior Member of Research Staff at Philips Laboratories in Briarcliff Manor, New York (1988-1991). He has published over 350 research papers, holds 23 patents, has given 150 invited and plenary talks at international conferences, and is included in the 2014 “Highly Cited Researchers” list (www.highlycited.com). Van de Walle is a Fellow of the APS, AVS, AAAS, MRS, and IEEE, as well as the recipient of a Humboldt Award for Senior US Scientist, the David Adler Award from the APS, the Medard W. Welch Award from the AVS, and the TMS John Bardeen Award.
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