The search for transformative materials beyond traditional covalent semiconductors, such as Si, has led to fast growing activities on new two-dimensional (2D) semiconductors and the exciting growing development of the metal chalcogenide indium selenide, InSe. This 2D crystal exhibits strong covalent atomic bonds in the layer plane and van der Waals (vdW) attraction between the layers, enabling the isolation of high-quality stable thin films down to the atomic monolayer thickness. The science and technology of 2D InSe represent a rapidly developing and vibrant field with breakthroughs emerging from both experiment and theory. This 2D semiconductor has a high photoresponsivity from the infrared (IR) to the ultra-violet (UV) spectral range; a low mass conduction band electrons and high electron mobility even in atomically thin films, larger than in Si-based field effect transistors (FETs); high mechanical strength; a strain-sensitive band structure; a density of states with 1D van Hove singularities, etc In this talk, I will present my recent research on 2D InSe and its heterostructures, and discuss emerging activities with prospects for digital ultra-thin electronics and nanophotonics.

https://www.scitecheuropa.eu/2d-systems/91875/

Biography： Prof.Amalia Patanè studied at Sapienza University of Rome where she graduated with first class honours in Physics in 1994 and obtained a PhD in 1997. She worked as a Research Associate (1998/2002) at the University of Nottingham, appointed Lecturer at Nottingham in 2002, and later Associate Professor (2006) and Professor of Physics (2011). Her research focuses on the quantum behavior of electrons in semiconductor materials and devices. She has published over 200 papers and given > 100 talks at international conferences. Her research achievements were recognized by the Sir Charles Vernon Boys Medal and Prize of the Institute of Physics (2007), an EPSRC Advanced Research Fellowship (2004/09), a Leverhulme Trust Research Fellowship (2017/19), the Chinese Academy of Sciences (CAS) President’s International Fellowship (2018/19) and an Honorary Professorship at the Institute of Semiconductors (2019 CAS, Beijing). She leads Nottingham’s research within the EU Graphene Flagship (2014/2023) and the UK Membership of the European Magnetic Field Laboratory (EMFL), a UK national facility for research with high magnetic fields (2015/20), awarded the ESFRI Landmark status in 2016. She is a member of the Executive Board of Nottingham’s Beacon Programme on advanced technologies and of international committees, including the International Union of Pure and Applied Physics Commission (IUPAP, Commission 8, Vice Chair 2018-2020).