学术活动发布与订制系统

Today’s electronics is based on semiconductors with parabolic energy dispersions near the band gap. Recently, Dirac fermions, where the energy dispersion near the Fermi level is linear, have attracted considerable attention for their unique electronic properties and, to some degree, the dream of performing particle physics on desktop. Two noticeable examples are the topological insulator (TI) and graphene. The realization of the great promises of the TI, however, requires the control of its defect states. In this talk, I will discuss how the intrinsic factors set the minimum defect density in pnictogen chalcogenides. To our surprise, defect physics of TI can be qualitatively different from that of ordinary semiconductor, as spin-orbit coupling in a TI can be so large to make an acceptor a donor. I will also discuss how to engineer Dirac cone at the Fermi level of strongly bound graphene on a SiC substrate. My emphasis will be on how to apply undergrad textbook knowledge to cutting-edge materials research, in particular, to uncover the physics underlying the transfer of Dirac dispersion between different electronic states.

美国伦斯勒理工学院教授，美国再生能源国家实验室资深研究员，吉林大学讲座教授，美国物理学会会士，共发表SCI 论文133篇, 包括36篇Physical Review Letters。SCI 引用超过3,000 次。有18 篇单引超过50次。最高单引250次。国际大会APS会议邀请报告4次。曾获美国能源部Chunky Bullet奖，美国再生能源国家实验室杰出服务奖。