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Cellular Microenvironment-driven Histone Post-translationalModifications (PTM...
【图书馆系列讲座】个人文献管理软件EndNote的功能与使用
【图书馆系列讲座】个人文献管理方法与工具:以NoteExpress为例
【图书馆系列讲座】PPT的设计制作与科研汇报
报告题目:
材料院《材料科学论坛》:Direct observation of a next-generation memory bit switch in real time
 报告人:
潘晓晴
密歇根大学教授
报告时间:
2012-01-12 09:30
报告地点:
清华大学材料院学术报告厅(逸夫技术科学楼2-321)
主办单位:
材料院《材料科学论坛》 联系人:朱静 老师 62794026 欢迎广大师生踊跃参加
  简介:
 
 
Abstract:
The utility of ferroelectric materials stems from the ability to nucleate and move polarized domains using an electric field. To understand the mechanisms of polarization switching, structural characterization at the nanoscale is required. Aberration-corrected transmission electron microscopy is used to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic ferroelectric (BiFeO(3)) on a ferromagnetic electrode (La(0.7)Sr(0.3)MnO(3)). We observed localized nucleation events at the electrode interface, domain wall pinning on point defects, and the formation of ferroelectric domains localized to the ferroelectric and ferromagnetic interface. These results show how defects and interfaces impede full ferroelectric switching of a thin film.
 
Refrence:
[1] “Domain Dynamics During Ferroelectric Switching” C.T.Nelson; Gao Peng; Xiaoqing Pan, et al. Science, 2011, 334, 968.
 
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