Abstract:

Secondary ion mass spectrometry (SIMS) has been a major analytical technique in the semiconductor industry. In this talk we will review the progresses of SIMS in the past decade, demonstrate some typical applications of SIMS in the semiconductor industry, and briefly overview the current status of SIMS. The review of the progresses will cover the development of low energy SIMS (LESIMS) tools, fundamental studies on the quantitative analysis with LESIMS, development of advanced SIMS analytical techniques, and other achievements in the instrumentation. Through the application examples we will demonstrate how SIMS is being used at various stages of semiconductor processes such as shallow junction formation, ion implant, thermal diffusion study, MOSFET gate stack development, silicide contact development, back-end process development, SiGe composition analysis, and impurity detection. The overview of the current status will lead to a statement that SIMS is an indispensable inspection tool for off-line monitor and control of many key processes, a powerful diagnosis technique for failure analysis, and a crucial support to new process and device development.

About the Speaker

Dr. Zhixiong Jiang has been a senior staff scientist and manager of the Surface Analysis Group in the Physical Analysis Laboratories (TX), Technology Solution Organization, Freescale Semiconductor, Inc (former Semiconductor Product Sector of Motorola Inc.). At this role he has been leading a group that provides analytical support with secondary ion mass spectrometry (SIMS) to Freescale R&D and manufacturing. Before he joined Motorola Inc. in 2000, he was a senior research engineer in the Department of Failure Analysis and Reliability, Institute of Microelectronics (IME), Singapore. His major responsibility in IME involved in development and applications of advanced surface analysis techniques of SIMS, Auger and SPM to support R&D and manufacturing of semiconductor industry in Singapore. From 1995 to 1998, Dr. Jiang worked as a postdoctoral research fellow in the Delft University of Technology, the Netherlands, where he focused on studies on low energy SIMS. He earned his Ph.D in 1995 from Tsinghua University in Beijing, under supervision of Prof. Liangzhen Cha. For over fifteen years, Dr. Jiang has been working on fundamentals of SIMS, development of advanced SIMS analytical techniques, and applications of SIMS and other surface analysis techniques in the semiconductor industry. He authored and co-authored over 60 publications in journals and conference proceedings.