报告题目: |
STM Investigation of Coulomb Impurities on Graphene |
报告人: |
汪洋 |
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UC Berkeley
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报告时间: |
2012-12-17 15:30 |
报告地点: |
清华-富士康纳米纳米科技研究中心四楼会议室 |
主办单位: |
物理系 |
简介: |
The response of Dirac fermions to a Coulomb potential is predicted to differ significantly from how non-relativistic electrons behave in traditional atomic and impurity systems. Surprisingly, many key theoretical predictions for this ultra-relativistic regime have not been tested. Graphene, a 2D material in which electrons behave like massless Dirac fermions, provides a unique opportunity to test such predictions. Here I will talk about our scanning tunneling microscopy (STM) study of Coulomb impurities on graphene. The charged impurities on graphene display two types of behaviors: subcritical regime where Dirac fermions scatter off the charged impurities while remain their delocalized natures, and supercritical regime where a novel electronic state known as the “atomic collapse” state is formed. |
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