简介：  AlGaN/GaN high electron mobility transistors (HEMTs) have made significant progress in recent times, showing great potential in high temperature, high power, and high frequency applications. Although impressive device performance has been demonstrated, applications of these GaN-based devices remain largely limited owing to the current collapse resulted  from electron trapping by surface states. This is one of the challenging barriers that prevents AlGaN/GaN HEMTs from achieving their best intrinsic DC/RF performance. Surface passivation by dielectrics such as SiO2 and Si3N4 has been reported and they have shown to mitigate the undesirable effects of surface states to some extent. In this seminar, we will present a brief introduction on GaN research and our results on the surface passivation effects of hafnium oxide (HfO2) on the performance of AlGaN/GaN HEMT.  In addition, a comparative study on the surface passivation effects of various  dielectrics: SiO2, Si3N4 and HfO2 will be discussed.

报告人CV：Dr EF Chor is an Associate Professor of the Department of Electrical & Computer Engineering, National University of Singapore and her research interests are currently focusing on (1) the design, fabrication and characterization of GaN based high electron mobility transistors (HEMTs), and (2) Schottky and ohmic contacts of compound semiconductors. She has substantial research experience on contacts to GaAs, InGaAs and GaN, and AlGaN/GaN HEMTs. Her research group has successfully made AlGaN/GaN HEMTs and conduct both DC and RF characterizations. Recently, Hafnium oxide has been demonstrated to be  a promising passivation layer for AlGaN/GaN HEMTs.  Furthermore, AlGaN/GaN MOS-HEMT using Hafnium oxide as the gate dielectric has also been successfully fabricated.

联系人：  姜开利       电话：96017