Abstract:
TOWARD A NEW ERA OF PLASMA SURFACE ENGINEERING
T. Yoshida
Dep. of Materials Engineering, The University of Tokyo,
7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
e-mail : yoshida@plasma.t.u-tokyo.ac.jp
“Plasma surface engineering (PSE)” has been developed based on the trinity of “Materials science”, “Surface science” and “Plasma science” in a special close connection with the development of various kinds of materials. In order to foresee the future of PSE, therefore, it is essential to understand the trends of materials. One of the most important trends is the upsurge of the concept of “Materials system”. This is an organized integration of materials that works in unison based on complex interactions and effects in various types of environments. It has been widely recognized as the root of epoch-making achievements in a variety of technologies and, I believe, will surely be the core of materials science and engineering in the 21st century. Accordingly, the role of PSE should expand to cover not only “Surfacing” but also “Interfacing”, since design and creation of highly functional interfaces (including surfaces) are becoming more critical in developing novel materials systems. The significance of “Interfacing” is made very clear by considering that the integration and organization of various kinds of materials has given prominent impacts in the areas of biomaterials, semiconductor devices and even structural materials.
Recalling my 30-year research career, I have been engaged in studying plasma processing based on materials science, i.e. plasma materials engineering, for the last 30 years. I started with the study of thermal plasma processing, especially plasma-particle interaction and co-condensation process of high temperature vapors, and then expanded to the ultrafine particles (so-called nano-particles) synthesis and also to plasma powder spraying and spray PVD & CVD for coating applications. 20 years ago, I also started the primitive studies of low pressure plasma-surface interactions including plasma vapor transport, sputtering and CVD, followed by the studies of meso-plasma for super-high rate deposition of high quality thin films. These research fields would be characterized mainly by plasma generation, vapor condensation, and plasma-surface interactions. It is fortunate for me that plasma technology in these aspects has reasonably fit to the global trend of materials R&D; the shift from “monolithic bulk” to “materials system with thin film & coating” in this 30 years.
Meanwhile, it is my belief that the primary awareness in materials development is “scalability” and it must be considered at every step in research not to make all the efforts just for the sake of research. In this respect, it is a natural consequence that the plasma processing, as a whole, has been attracting global attentions for the last 20 years due to its inherent scalable and affordable characteristics. However, the present plasma technologies seem not yet evolved at the sufficient level to meet the requirements from the fields where this technique was not applicable in the past. That is, the rapidly growing desires from society would not be fully gratified if the currently available technologies are only used even in the PSE. How can we do with it? I suppose that I may not be the only one who believes that the root and stream of valuable researches in PSE should be reviewed and understood first and then new principles have to be introduced based on fundamental research concepts.
With these in mind, in this lecture, I would like to address the future potential of PSE, with my firm belief that “Interfacing” shall be an essential cornerstone of the discipline for development of novel materials systems that will benefit for human society.
Keywords: Materials system, Interfacing,
CV:
Toyonobu Yoshida,
Professor of The University of Tokyo, Department of Materials Engineering
Office
Department of Materials Engineering
School of Engineering
The University of Tokyo
Hongo, Bunkyo-ku,Tokyo 113-8656, JAPAN
Phone: +81-3-5841-7100
Fax: +81-3-5841-8641
E-mail: yoshida@plasma.t.u-tokyo.ac.jp
HP: http://www.plasma.t.u-tokyo.ac.jp/
Education:
1972: Department of Metallurgy, The University of Tokyo:(BE)
1974: Department of Metallurgy & Materials Science, The University of Tokyo:(MA)
1977: Department of Metallurgy & Materials Science, The University of Tokyo:(Ph.D.)
Professional Career:
1977: Research Associate, Faculty of Engineering, The University of Tokyo
1982: Assistant Professor, Faculty of Engineering, The University of Tokyo
1984: Associate Professor, Faculty of Engineering, The University of Tokyo
1989~present :Professor, Faculty of Engineering, The University of Tokyo,
Awards:
1987: Paper Award (Japan Inst. of Metals).
1989: Achievement Award (Japan Inst. of Metals).
1992: Nishiyama Memorial Award (Iron and Steel Institute of Japan)
1994:Environment Award (The Nikkan Kogyo Shinbun, Ltd. & Environment Agency)
1995: Distinguished Lecture Series in 1995(Minnesota University)
1996: Notable Invention Award: (Science and Technology Agency)
1996: Academic Award (The Ceramic Society of Japan)
2000: IUPAC Fellow
2003: Masumoto Hakaru Award((Japan Inst. of Metals).
2004: Plasma materials science award(JSPS-153 committee)
Editorial Board (2008):
J. Plasma Chem. and Plasma Processing,
Plasma Sources: Science and Technology,
Science and Technology of Advanced Materials
Chairmanship:
1990~1996: JSPS-153 Committee on Plasma Materials Science
1997~1998: IUPAC Subcommittee on Plasma Chemistry
Others:
General Secretary of ISPC-8 (Tokyo, 1987)
Member of IUPAC Subcommittee on Plasma Chemistry (1988~1998)
IUPAC Fellow (1999~)
Papers:
Total citation (more than 1800)
Regular Issue: in English (~140), in Japanese (~30), Books (joint authors)(10)
Patents: ~25(Japan), ~5(foreign countries)
Research fields: (See my Abst.)
# Thermal Plasma Processing
(Plasma spray PVD, Plasma spray CVD, Plasma powder Spraying/
Ultrafine Powder Synthesis (Metal, Alloys, Ceramics)/
Thick Coatings(SiC, Si3N4, Diamond, High Tc Superconductor, SOFC, TBC)
# Meso Plasma Processing
(Epitaxial and micro-crstalline Si films, Solar cells)
# Low pressure Plasma Processing
(Low pressure ICP & Phase regulated Bias Sputtering (cBN, Diamond)) |
