报告题目: |
MBE Manufacturing of InGaAsP Lasers |
报告人: |
任宏文 博士 |
|
Applied Optoelectronics Inc.
|
报告时间: |
2011-06-14 16:00 |
报告地点: |
物理系三楼报告厅 |
主办单位: |
物理系 |
简介: |
摘要：I would like to introduce our breakthroughs to make the MBE
technology a high performance and reliability, high yield and
throughput manufacturing tool for 1.3-1.55um InP/InGaAsP laser diodes
over both ridge waveguide and buried-heterostructure platforms. In
addition, process flows and product characteristics for communication
applications will be presented. |
|
