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报告题目:
Towards High Performance On-Chip Inductors Incorporating Magnetic Materials
 报告人:
Hongbin Yu
Assistant Professor, 
Arizona State University
报告时间:
2011-07-15 14:30
报告地点:
清华大学微电子学研究所302会议室
主办单位:
微电子所学术委员会
  简介:
内容简介
l    Continued scaling of electronic device and systems and the increasing demand of circuit functionality require continued scaling of passive components, such as inductors, which typically occupy large area compared to other circuit components. Incorporating magnetic material with on-chip inductor is one of the most researched approaches to increase inductance, quality factor, and silicon chip-area efficiency. These efforts will produce inductors with much higher area efficiency and quality, enabling applications in radio frequency (RF) and analog/mixed signal (AMS) circuit design, such as power amplifier, distributed wireless circuits, low noise amplifiers, high-speed signaling and clocking, which will benefit ultimately the efficient integration for System-on-Chip (SoC) applications. In this presentation, recent efforts on incorporating magnetic materials into on-chip inductor will be reviewed, with particular emphasis on the use of materials such as permalloy (NiFe) and Co-Zr-Ta (CZT).  Factors that could affect inductor performance including eddy current loss and ferromagnetic resonance of the magnetic materials will be discussed.
 
作者简介
l    Prof. Hongbin Yu received his PhD in physics in 2001 from the University of Texas at Austin, and his BS and MS in physics from Peking University, P. R. China, and conducted his post-doctoral research at California Institute of Technology and University of California at Los Angeles between 2003 and 2005, before joining Arizona State University faculty. In addition to the research on the scaling of on-chip indictors, his research interests are also on the advanced nano electronic device fabrication and characterization, flexible electronics and optoelectronics based on high quality electronic materials as well as directed self-assembling of nanostructures for potential device applications.
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