Abstract：

Resistance and capacitance are important physical quantities that determine the operation of electronic circuits. When the size of a device is nanoscale, quantum effects appear in resistance and capacitance. To understand such quantum effects is crucially important in exploring and realizing novel nanoscale devices (not only electronic ones, but also various other kinds of devices).

In this lecture, I will discuss quantum behavior of resistance and capacitance with introducing novel simulations to examine them and presenting examples of simulations done by my group. Topics include both DC and AC transports, and target systems include carbon nanotubes, single molecular bridge, and metal-oxide-metal junction.

 

Selected references:

1) A. Tawara, T. Tada and S. Watanabe, Phys. Rev. B 80, 073409 (2009).

2) T. Yamamoto, K. Sasaoka, S. Watanabe and K. Watanabe, Phys. Rev. B 81, 115448 (2010); T. Yamamoto, K. Sasaoka, and S. Watanabe, Phys. Rev. B 82, 205404 (2010).

3) T. Gu, T. Tada and S. Watanabe, ACS Nano 4, 6477 (2010).

4) S. Kasamatsu, S. Watanabe and S. Han, Phys. Rev. B 84, 085120 (2011).

 

Professor, Department of Materials Engineering, The University of Tokyo 

B. Sci.: Department of Physics, School of Science, The University of Tokyo 1984

M. Sci.: Department of Physics, School of Science, The University of Tokyo 1986

D. Sci.: Department of Physics, School of Science, The University of Tokyo 1989 

Researcher, Aono Atomcraft Project, Research Development Corporation of Japan 1989-1994 

Visiting Researcher, Advanced Research Laboratory, Hitachi, Ltd. 1994-1997 

Associate Prof. (1997-2004), Dept. Materials Engineering, Univ. Tokyo

Prof. (2004-prosent), Dept. Materials Engineering, Univ. Tokyo

Main concerns in our groups are atomic scale simulations to obtain guiding principles for design of new materials and to derive reliable information on target materials from experimental data. Current research topics are as follows: a) Development of simulators for nano-scale measurements of materials properties, such as scanning probe microscopies, multi-probe conductance measurements, capacitance measurements on nanometer scale, and field electron emission measurements. b) Simulations of electrical properties of single molecule/electrode hybrid systems to explore the possibility of single molecular electonics. c) Simulations of behaviors of atoms and electrons in solid electrolyte atomic switches and related systems.