简介: |
Semiconductor optoelectronic materials and devices have experienced very rapid development for more than half a century. However, there still remains a lack of closely lattice-matched materials and substrates suitable for the grand integration of various kinds of semiconductor optoelectronic and electronic devices on a single chip. I have recently proposed a new material platform: the II-VI (MgZnCd)(SeTe) and III-V (AlGaIn)(PAsSb) semiconductor materials lattice-matched to InAs, GaSb and InSb substrates. The binaries, alloys, and their quantum structures (quantum well and superlattice) of the platform have direct bandgaps covering a very broad energy spectrum from far IR (< 0 eV) to UV (~3.4 eV). This feature is not achievable by any other known lattice-matched semiconductors on any commercially available substrates. Such a unique material platform enables new light emitting devices, multi-junction solar cells, multi-color photodetectors, high electron mobility transistors (HEMTs), resonant tunneling diodes, and facilitates monolithic integration of various materials without misfit dislocations to ensure the best quality for device applications. This talk will focus on the latest progress of the MBE growth of the materials and their applications in these devices. It will also touch the potential about the use of the materials platform to study fundamental science like topological insulators and related new quantum materials.
Brief Bio: Professor Zhang received his BS in Physics from Nanjing Normal University in 1982 and MS from the Institute of Semiconductor, Chinese Academy of Sciences, in 1987, and did his research at the Max Planck Institute for Solid States and received this doctoral degree in physics from the University of Stuttgart in 1991. He then worked as an Assistant Research Engineer at UCSB before he joined Hughes Research Labs in 1993. In 1996, he was appointed Associate Professor in the Department of Electrical Engineering at ASU and was promoted to full professor in 2000. He edited 3 books, published 3 book chapters and more than 290 peered reviewed papers, presented 388 invited and contributed talks, 11 issued US patents, and advised over 30 PhD students and supervised over 40 postdocs and visiting scholars. He is a fellow of IEEE and OSA, and served as the Associate Dean for Research at the Fulton Schools of Engineering, and is the founding director of the Center for Photonics Innovation, and the director of a university user facility ASU NanoFab. His areas of research interest include MBE growth, optical properties of semiconductor heterostructures, optoelectronic devices, and their applications. More information about his group can be found on the webpage: http://asumbe.eas.asu.edu/.
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