主讲人简介：
Alex Yoon博士，泛林集团高级技术总监，负责长期研究和技术开发工作并带领团队在斜角清洁、无电沉积等领域做了很多研发项目。2004年加入公司前，Alex Yoon博士曾任美国应用材料公司技术经理，负责研究金属化学气相沉积（CVD）、原子层沉积（ALD）技术，包括硅化钨、钨的CVD技术以及钨的ALD技术。他曾在PMT、Trikon公司担任过众多技术职务。Yoon博士拥有加州大学伯克利分校的化学工程博士和硕士学位，以及加州大学洛杉矶分校的化学工程学士学位。Lam Research Corporation 是世界知名半导体生产设备制造商,主要从事半导体生产设备、开发、制造、销售及售后服务。
Alex Yoon, Ph.D., is a Senior Technical Director at Lam Research. He currently leads the long-range research for the Emerging Memory and Novel Materials areas of the Corporate Technology Development Team. Dr. Yoon joined Lam Research in 2004 in their New Product Development team and led many projects in the areas of Non-Volatile Etch, Bevel Clean and Electroless Deposition.
Prior to joining Lam Research, he was the Technology Manager at Applied Materials. During his seven years there, Dr. Yoon worked on Metal Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) technologies, including Tungsten Silicide, Tungsten CVD and Tungsten ALD. Prior to joining Applied Materials, he was a Process Engineer at PMT/Trikon.
Dr. Yoon received his B.S. in Chemistry and Materials Science from the University of California at Los Angeles and his Ph.D. in Chemistry from the University of California at Berkeley.
讲座简介：
Our electronics are constantly evolving. They semiconductor devices that drive them demand higher performance, lower processing temperatures, less power consumption and uniform film coverage. The discovery of single-layer Graphene as one way to meet these challenges kicked off an extensive wave of research in 2D materials.
Graphene and Transition Metal Dichalcogenides are the most actively investigated 2D materials, but graphene as a channel material still remains difficult to implement. No intrinsic band gap, high processing temperatures, high contact resistance and the lack of reliable wafer-scale doping techniques are all limitations. These limitations have pushed researchers to start looking at graphene for back end of line applications.
Other 2D materials also show promise as alternatives to graphene, based on having intrinsic band gaps. But, these materials have similar implementation challenges such as high processing temperatures and high contact resistance. Mechanical exfoliation and chemical methods to grow 2D materials produce flakes that are not compatible with current high volume manufacturing integrated circuit processes.
Newer, more innovative methods are emerging to meet these processing and manufacturing challenges. Semiconductor equipment manufacturers are actively pursuing solutions and, in this presentation, we will outline the challenges that still remain and share progress on key areas of 2D materials research that are showing the most promise for the future.
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