简介: |
Biography
Dr. rer. nat. Ilia Valov is Principle Investigator at the Research Centre Juelich and RWTH-Aachen University, Germany. His research interests and activities are concentrated on electrochemical and, in general, physicochemical phenomena at the nano and sub-nanoscale, such as mass and charge transport, point defects, surfaces and interfaces with a focus on resistive switching memories, memristive devices and energy conversion. He published over 80 original research papers in more general materials science journals such as Nature Materials, Nature Nanotechnology, Nature Communications, Advanced Materials, ACS Nano, and as well in more focused journals such as Nanoscale, PCCP, IEEE, APL, Electrochimica Acta, Solid State Ionics, Nanotechnology etc. He has 2 book chapters and holds 6 patents. The works received over 2700 citation with i10 index of 50, h-index 26. Results are regularly reported in social media (newspapers, web news, BBC), blogs and discussion forums.He presented in the recent years over 130 talks, including 2 plenary, 4 keynote and over 30 invited on national and international conferences such as MRS, EMRS, ECS, ISCAS, ISE, DPG etc. He is also regularly invited to hold special invited lectures at renown universities and industrial companies such as ETH Zurich, MIT Boston, Cambridge UK, HP Sunny Valey, NIMS Tsukuba, Waseda University Tokio etc.
Absrtact:
Redox-based resistive switching memories (ReRAM) developed rapidly in the last decade as most promising candidates for nanolelectronic industry for new type non-volatile memory devices fulfilling the demands for green IT i.e. low power consumption, high operation speed and integration density, scalability and reliability. Recent achievements have clearly demonstrated the diversity of applications these devices can be used – for neuromorphic applications, alternative computing and logic operations, selector elements. All these developments are supported by system functionalities having their origin in the electrochemical nature of the ReRAM cells.
In this talk the newest achievements in the microscopic understandings of the processes responsible for the ReRAM functionalities will be presented. It will be shown that different ions (both cations and anions) are mobile and can undergo electrochemical transformation and thus, contribute to the resistive switching. The effects of moisture will be presented and their importance for both ECM and VCM ReRAMs will be discussed. The influence of different electrode materials in terms of electrocatalytic activity and passivation behavior will be highlighted. Finally, it will be shown how the nanobattery effect relates to neuromorphic applications.
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