Charge and spin are the two intrinsic attributes of electrons, which pave the way for electronic devices in our daily life. In this talk, I would like to focus on how the interfaces between strongly correlated oxide materials can magically modulate charge and spins of electrons, leading to various exotic physical phenomena. Moreover, by virtue of interfacial coupling in multiferroic heterostructures, we have been able to electrically control electronic properties of intermetallic alloys, potential for super low energy-consuming memory applications.

报告人：刘知琪，男，北京航空航天大学材料科学与工程学院教授，博士生导师。2009年本科毕业于兰州大学物理学国家基地班磁学专业；2013年在新加坡国立大学获得凝聚态物理（氧化物电子学）博士学位。先后在美国橡树岭国家实验室和加州大学伯克利分校从事铁电多铁材料及存储器件博士后研究；继而在美国洛斯阿拉莫斯国家实验室担任“主任博士后”从事拓扑重费米子体系磁性和超导研究。发表论文50余篇，包括Nature、Phys. Rev. Lett.、 Phys. Rev. B等，一些研究工作被Science、Nature Phys.等高亮报导。获得2014年新加坡国立大学最佳物理博士毕业论文金奖。受邀担任Nature Commun., Adv. Mater., Adv. Energy Mater., Adv. Funct. Mater., Phys. Rev. B等学术期刊的审稿人。

代表性论文：
[1] Z. Q. Liu*, H. Chen, J. M. Wang, J. H. Liu, K. Wang, Z. X. Feng, H. Yan, X. R. Wang, C. B. Jiang, J. M. D. Coey, and A. H. MacDonald, Electrical switching of the topological anomalous Hall effect in a non-collinear antiferromagnet above room temperature, Nature Electronics 1, 172 (2018).
[2] Z. Q. Liu*, L. Li, Z. Gai, J. D. Clarkson, S. L. Hsu, A. T. Wong, L. S. Fan, M.-W. Lin, C. M. Rouleau, T. Z. Ward, H. N. Lee, A. S. Sefat, H. M. Christen*, and R. Ramesh*, Full electroresistance modulation in a mixed-phase metallic alloy, Physical Review Letters 116, 097203 (2016).
[3] Z. Q. Liu, C. J. Li, W. M. Lü*, X. H. Huang, Z. Huang, S. W. Zeng, X. P. Qiu, L. S. Huang, A. Annadi, J. S. Chen, J. M. D. Coey, T. Venkatesan, and Ariando*, Origin of the two-dimensional electron gas at LaAlO3/SrTiO3 interfaces: The role of oxygen vacancies and electronic reconstruction, Physical Review X 3, 021010 (2013).
[4] Z. Q. Liu, D. P. Leusink, X. Wang, W. M. Lü, K. Gopinadhan, A. Annadi, Y. L. Zhao, X. H. Huang, S. W. Zeng, Z. Huang, A. Srivastava, S. Dhar, T. Venkatesan, and Ariando*, Metal-insulator transition in SrTiO3-x thin films induced by frozen-out carriers, Physical Review Letters  107, 146802 (2011).
[5] J. A. Mundy, C. M. Brooks, M. E. Holtz, J. A. Moyer, H. Das, A. F. Rébola, J. T. Heron, J. D. Clarkson, S. M. Disseler, Z. Q. Liu, A. Farhan, R. Held, R. Hovden, E. Padgett, Q. Y. Mao, H. Paik, R. Misra, L. F. Kourkoutis, A. Scholl, J. A. Borchers, W. D. Ratcliff, R. Ramesh, C. J. Fennie, P. Schiffer, D. A. Muller, and D. G. Schlom*, Atomically engineered ferroic layers yield a room-temperature magnetoelectric multiferroic, Nature 537, 523 (2016).