A brief review over technologies focused on micro/nano fabrication and ultra-precision manufacturing has been descried for patterning devices in 10 nm tech-node and beyond. For applications in magnetic recording, a bit patterned media (BPM) consists of arrays of nanoscale magnetic islands where each bit of information is stored in an individual island, thus the entire bit volume defines the anisotropy energy rather than the volume of individual grains. Here we demonstrated that extreme Ultra-violet interference lithography (EUV-IL) has particular advantages for the fabrication of BPM due to the possibility to create the high resolution structures over large areas with a high throughput. This study will allow us to gain a valuable insight into the nanoscale switching behavior, giving an indication of the potential of XIL as a method of producing patterned media for future storage applications. For application in MRAM below sub-20 nm node by EUV/electron beam lithography, critical etching process has been fully discussed for mass production.

报告人简历：

Feng Luo got his B. S. in 1999 and PhD in Materials Chemistry at College of Chemistry and Molecular Engineering, Peking University in 2004. Then he worked as a postdoc in Max-Planck-Institute for Microstructure Physics (Germany) and in the Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut (Switzerland) until Oct. 2009. From 11/2009-11/2010, he was appointed as a principal investigator in the College of Engineering at Peking University. Since 12/2010 he works at IMDEA-Nanoscience (Madrid) as a tenured track researcher and from 2014, he becomes the tenured research Professor and group leader of Multi-Functional Devices by Interface Control and Nano-engineering，and promoted as tenured Full Professor since 2016. He has published 48 publications with total citations more than 1740 times. As the Chair Professor of College of Mechanical Engineering nominated by Xi’an Jiaotong Univeristy, Prof. Luo’s main contribution involves 1) R&D on 7nm EUV resist and 7nm Node/13nm period interference EUV technologies; 2) the smallest dot pattern arrays can be made by optical lithography for next generation magnetic recording with EUV, bit patterned media can be individually recognized by Scanning X-ray transmission microscopy with resolution below 20 nm; 3) 8/12 inch next-generation Sub-20nm magnetic random access memory STT-MRAM chip process (comparable to the best process from Samsung technology) and 50 nm resolution, 1:7.5 global maximum aspect ratio structure of 8/12 inch nanoimprinting equipment for magnetic sensor; 4) 8/12 inch nanoimprint and 8/12 inch RIE/IBE double etching equipment for MRAM cooperating with German-Litho and Leuven Instrument. He is also the referee of grant proposal for M-era foundation (http://www.m-era.net/) from 2013. He has been involved in more than 25 research projects and 10 projects as PI. These projects are now funded with the total budget of 1.15 Million Euro as the PI. His group has interests in three main research lines: (1) Micro/Nano Fabrication and Ultra-Precision Manufacturing for Applications in Magnetic Hard Disk Storage, Magnetic Random Access Memory (MRAM) and Magneto-Optical Sensors (2) Tuning Physical Properties by Design and Controlling: Interface Engineering at Atomic Scale and Lithography Patterning (3) Advanced Characterization Techniques Based on X-ray and Electrons.

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