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集成电路系列学术邀请报告——Chiplet设计与异质集成封装
Global Quantum Communication Network and Future Aspects
面向高比能电池材料的表界面工程
高电压固态电池用聚合物基固态电解质
报告题目:
Topological Anderson Insulator - a novel quantum state of matter
 报告人:
沈顺清
教授 香港大学物理系
报告时间:
2009-05-14 10:00
报告地点:
理科楼三楼报告厅
主办单位:
物理系
  简介:

摘要:The quantum Hall state constitutes a paradigm for a topological state
of matter, the Hall conductance depends only on the number of edge states. A
class of analogous insulators, such as graphene with spin-orbit coupling and
an "inverted" semiconductor HgTe/CdTe quantum well, possess a single pair of
counter-propagating edge states, exhibiting quantum spin Hall effect. It is
natural to ask how disorder affects the stability of the helical edge states
in the topological insulator. We find that the physics of topological
insulator is unaffected by the presence of weak disorder but is destroyed
for large disorder, leading to a phase of topological Anderson insulator. In
this talk I shall introduce relevant properties of this novel quantum state
of matter.

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