Abstract: In the last few years, an offset between low- and high-redshift star-forming galaxies has been found in the [OIII]/Hbeta versus [NII]/Halpha BPT diagram. I will present a method to select high-redshift analog galaxies based on the location of the BPT diagram. These local analog galaxies share the same region as z~2-3 galaxies in the BPT diagram and well resemble the properties of z~2-3 galaxies, including high specific SFRs  and compact sizes, particularly, high ionization parameters and electron densities. These analogs provide a unique local laboratory to study high-redshift galaxies. I will discuss how to improve our understanding on the high-redshift metallicity empirical calibrations and potential marjor physical mechanism(s) to drive star-forming BPT locus evolution by using these analog galaxies.

Bio: Dr. Fuyan Bian obtained his B.A. and M.S. degrees in physics at Tsinghua University in 2004 and 2008, and his Ph.D. degree in astronomy at University of Arizona in 2013. After that, he moved to Australian National University as Stromlo Fellow. His research interests include studying high-redshift galaxies and quasars and galaxy formation and evolution in the early Universe.