报告题目: |
‘Green’ Deposition of Anisotropic Metal Nanostructures on Semiconductor Substrates |
报告人: |
Yugang Sun |
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Dr.
Center for Nanoscale Materials
Argonne National Laboratory, USA
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报告时间: |
2008-10-16 10:00 |
报告地点: |
化学系何添楼406会议室 |
主办单位: |
清华大学化学系 |
简介: |
Abstract: Direct growth of anisotropic metal nanostructures with well-defined shapes on semiconductor substrates represents a challenge to synthesize hybrid materials with complex functionalities. This review highlights the recently developed approach in our group for depositing nanoplates made of noble metals (e.g., Ag and Pd) on n-type traditional semiconductor wafers (e.g., GaAs and Si). In the typical syntheses, only the semiconductor wafers and pure aqueous solutions of metal precursors (i.e., AgNO3 for Ag and Na2PdCl4 for Pd) are involved in the reaction. The absence of surfactant molecules, organic solvents, catalysts, etc. in the syntheses makes this strategy to be a green process, resulting in the formation of clean metal/semiconductor interfaces. By discussing energy levels and charge transfer processes at the semiconductor/liquid electrolyte interfaces in details, the criteria are, for the first time, concluded for efficiently separating nucleation and growth steps in the growth of anisotropic metal nanostructures on semiconductor substrates. Unique properties of the as-grown metal nanoplates/semiconductor composite materials are also discussed to highlight their potential applications. |
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