报告摘要：GaN/AlGaN-based high-electron-mobility transistors (HEMTs) are attractive for RF power applications due to their performance and high-voltage stability. Defects can limit their long-term reliability and radiation response in space environments. In this presentation we show that low-frequency noise measurements, coupled with density functional theory calculations, can provide significant insight into the nature of these defects. Defect densities are sensitive to process conditions, bias during irradiation, and voltage-stress. Illustrative results are shown for both research and industrial grade devices.

报告人简介：Dan Fleetwood received BS, MS, and Ph.D. in Purdue University, West Lafayette, IN, USA in 1980, 1981, and 1984 respectively. Dr. Fleetwood currently is a professor of Electrical Engineering, a secondary professor of Physics and Chair of Electrical Engineering and Computer Science Department in Vanderbilt University. Prior to joining Vanderbilt University, Dr. Fleetwood was a distinguished/senior member of technical staff in the Radiation Technology & Assurance Dept. of Sandia National Laboratories (1984~1999). His research interests include effects of ionizing radiation on microelectronic devices & materials, novel microelectronic materials, charge trapping in silicon dioxide, and Si/SiO₂ interface-trap generation, highly reliable electronics for high-raidation and high-temperature environments, origin(s) of 1/f noise in semiconductors, semiconductor devices and metals, and so on. Dr. Fleetwood has publications of 494 in total, with citations more than 13000. He received the Merit Award of the IEEE Nuclear and Plasma Science Society (NPSS) in 2009.

第173期“论坛”主请人联系方式：
刘以农   62781624   liuyinong@mail.tsinghua.edu.cn