08:30 Openings
08:40 Morning Session
08:40 Advances in Processes and Device Technologies for AlGaN/GaN High Electron Mobility Transistors
I. Adesida, University of Illinois, Urbana-Champaign
09:05 Processing and Defect Control in Advanced Ge Technologies
C. Claeys, IMEC & Katholieke Universiteit Leuven
09:30 CMOS Fabricated by Hybrid-Orientation Technology (HOT)
Bin (Frank) Yang, Advanced Micro Devices
09:55 A New and Highly Manufacturable Strain Technique for PMOS Device Performance Enhancement with Gate Length 35-nm and below
Qiuxia Xu, Institute of Microelectronics, Chinese Academy of Science
10:20 Break
10:40 Recent Advances in Photonic Devices for RF/Wireless Communication Applications
Paul K. L. Yu, University of California, San Diego
11:05 Threshold-Voltage Modeling of Bulk FinFETs by Considering Charge-Sharing and Surface Potential
Jong-Ho Lee, Kyungpook National University
11:30 Modeling and Design of Beyond the Roadmap Materials and Devices: Nanowires, Nanotubes, and Molecules
Roger Lake, University of California, Riverside
11:55 Lunch
13:20 Poster Sessions
14:20 Afternoon Session
14:20 Unified Compact Modeling of Emerging Multiple-Gate MOSFETs
Xing Zhou, Nanyang Technological University
14:45 Modeling the Gate Tunneling Current Effects of Sub-100nm NMOS Devices with an Ultra-thin (1nm) Gate Oxide
James B. Kuo, National Taiwan University
15:10 Robust ESD Protection Solutions in CMOS/BiCMOS Technologies
Juin J. Liou, University of Central Florida
15:35 Break
15:55 The Incremental Frequency Charge Pumping Method: Extending the CMOS Ultra-Thin Gate Oxide Measurement to below 1nm
Steve S. Chung, National Chiao Tung University
16:20 Physics of High-Frequency Noise in Insulated Gate Field-Effect Transistors
R. P. Jindal, University of Louisiana, Lafayette
16:45 Future of Nano CMOS Technology
Hiroshi Iwai, Tokyo Institute of Technology
17:10 Closing
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