摘要：

With the end of the CMOS roadmap looming, identifying a new logic device technology is becoming increasingly pressing. For the last 20 years, InAlAs/InGaAs HEMTs have held the world record of frequency response. This technology is space qualified and it is also a leading candidate for 160 Gb/s optical fiber systems. Until recently, there has not been an analysis of the suitability of InGaAs High-Electron Mobility Transistors (HEMTs) for logic applications. Figures of merit relevant to logic, such as CV/I (gate delay), ION/IOFF, DIBL and subthreshold slope, have not been evaluated in this family of devices. At MIT, we have fabricated 100 nm InAlAs/InGaAs HEMTs and we have found that they offer excellent logic performance. However, at 100 nm gate lengths, these devices have already reached their scaling limit. Further gate length scaling will require aggressive insulator thickness scaling and perhaps a complete device redesign. At this talk, Prof. del Alamo will discuss the potential and the challenges of InGaAs as a channel material for future CMOS logic applications.

Biographical sketch: Prof. Jesus A. del Alamo

Prof. Jesus A. del Alamo obtained a Telecommunications Engineer degree from the Polytechnic University of Madrid in 1980 and MS and PhD degrees in Electrical Engineering from Stanford University in 1983 and 1985, respectively. From 1985 to 1988 he was with NTT LSI Laboratories in Atsugi (Japan) and since 1988 he has been with the Department of Electrical Engineering and Computer Science of Massachusetts Institute of Technology where he is currently Professor and MacVicar Faculty Fellow. His current research interests are on microelectronics technologies for communications and logic processing. He has a particular interest in Si LDMOS, CMOS, and GaAs PHEMTs for RF power applications and in InGaAs HEMTs as a beyond-the-roadmap logic technology. He is also active in online laboratories for science and engineering education.

Prof. del Alamo has received numerous teaching awards at MIT: the Baker Award, the Edgerton Junior Faculty Achievement Award, the Smullin Award, and the Bose Award. He was an NSF Presidential Young Investigator. He is a member of the Royal Spanish Academy of Engineering and Fellow of the IEEE. He currently serves as Editor of IEEE Electron Device Letters.