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报告题目:
Exploring the Peculiar Physical Properties and Possible Applications of Semiconductor Nanowires
 报告人:
俞大鹏 教授
北京大学物理学院
报告时间:
2012-11-15 16:00
报告地点:
理科楼郑裕彤讲堂
主办单位:
物理系
  简介:
Nanowires have been a top-five focused research topics in physics, and stimulated intensive interests world-wide. This lecture composes of two major parts.
In the first part, I will give a brief summary of our pioneer and leading contributions to the world-wide nanowire research. (1). We are the pioneers to synthesize silicon nanowires from the bottom via a catalytic-directed growth of semiconductor nanowires, and enable the controllability in size, orientation, and superlattice/coreshell heterostructures of semiconductor nanowires. (2). We extended the concept of nanowire synthesis to a wide variety of metal oxide nanowires, leading to a world-wide following up of the breakthrough. (3). It is further demonstrated that the physical properties of the semiconductor nanowires can be modified/ via chemical doping, tuned by magnetic and strain fields, resulting in the nanowire p-n heterojunctions, diluted magnetic semiconductors, and strain sensors. (4).We are the first to provide the experimental evidence of quantum confinement effect in silicon nanowires. It is showed that the spin current of a single magnetite nanowire can be tuned via magnetic field (spin filter), and the thermal spin transfer torque effect was also evidenced in a nanowire spin-valve. (5). We are the few pioneers to explore the field emission properties of nanowire arrays, thanks to the sharp tiny tips of the nanowires showing abnormal large field enhancement factor. The possible applications of the nanowire networks in high efficiency flexible solar cells are also demonstrated. Above pioneer work has lead to a total reference/citations >10,000 times by colleagues world-wide, and an H index of 54.
 In the main second part, I will extend to show the advantage of both high spatial and energy resolution cathodoluminescence (CL) in characterization of the fine structures of the nanomaterials. In particularly, I will demonstrate that the high special resolution of the CL at ~ 5.5 K enable us to address the significant strain modulation of the optical emission and electronic structures of semiconductor nano/micro wires. In contrast, the high energy resolution of the CL makes it possible to “see” directly the resonant SPP modes that are confined to the metal nanocavity.
 
Selection of recent featured articles:
 
1.      Han XB(韩晓冰),Liangzhi Kou, Zhuhua Zhang, Ziyue Zhang, Xinli Zhu, Jun Xu, Zhimin Liao, Wanlin Guo,Dapeng Yu: Strain-gradient effect on energy bands in bent ZnO microwires, Advanced Materials 24, 4707(2012).
2.      基于Ni/NiO核壳结构纳米线阻变效应的存储与开关器件: Li He(何丽), Zhi-Min Liao, Han-Chun Wu, Xiao-Xue Tian, Dong-Sheng Xu, Graham L. W. Cross, Georg S. Duesberg, I. V. Shvets, and Da-Peng Yu: “Memory and Threshold Resistance Switching in Ni/NiO Core-shell Nanowire”, Nano Letters 11,4601(2011).
3.      一种在任意衬底上精确定位转移单片石墨烯的技术:Bie YQ(别亚青); Zhou, YB; Liao, ZM; Yan, K; Liu, S; Zhao, Q; Kumar, S; Wu, HC; Duesberg, GS; Cross, GLW; Xu, J; Peng, HL; Liu, ZF; Yu, DP: “Site-Specific Transfer-Printing of Individual Graphene Microscale Patterns to Arbitrary Surfaces”, Advanced Materials 23, 3938(2011) .
4.      垂直纳米腔中的表面等离激元共振模式研究:Zhu XL(朱新利); Zhang, JS; Xu, J; Yu, DP:“Vertical Plasmonic Resonant Nanocavities”, Nano Letters 11,1117(2011).
5.      基于ZnO纳米线/GaN薄膜p-n结的自驱动-超快响应日盲紫外探测器件:Bie YQ(别亚青); Liao, ZM; Zhang, HZ; Li, GR; Ye, Y; Zhou, YB; Xu, J; Qin, ZX; Dai, L; Yu, DP: “Self-Powered, Ultrafast, Visible-Blind UV Detection and Optical Logical Operation based on ZnO/GaN Nanoscale p-n Junctions”, Advanced Materials 23,649(2011).
6.      用于表面等离激元研究的极限尺寸超级光滑全金属纳米结构:Zhu Xinli(朱新利); Zhang Yang; Zhang Jiasen, Yu Dapeng: “Ultrafine and Smooth Full Metal Nanostructures for Plasmonics”, Advanced Materials 22,4345(2010).
7.      单根ZnO纳米线/GaN薄膜p-n结太阳能与LED器件: Bie YQ(别亚青); Liao, ZM; Wang, PW; Zhou, YB; Han, XB; Ye, Y; Zhao, Q; Wu, XS; Dai, L; Xu, J; Sang, LW; Deng, JJ; Laurent, K; Leprince-Wang, Y; Yu, DP: “Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes”, Advanced Materials 22,4284(2010).
8.      利用阴极荧光显微镜研究受限于方形金属纳米腔中的表面等离激元的共振模式的三维分布:Zhu XL(朱新利); Ma, Y; Zhang, JS; Xu, J; Wu, XF; Zhang, Y; Han, XB; Fu, Q; Liao, ZM; Chen, L; Yu, DP: “Confined Three-Dimensional Plasmon Modes inside a Ring-Shaped Nanocavity on a Silver Film Imaged by Cathodoluminescence Microscopy”, Physical Review Letters 10, 127402(2010).
9.      金属纳米线自旋阀中观察到的热自旋转移矩的证据:Yu, HM(于海明); Granville, S; Yu, DP; Ansermet, JP: “Evidence for Thermal Spin-Transfer Torque”, Physical Review Letters 104,146601(2010).
弯曲ZnO纳米线中的力电耦合研究:Han XB(韩晓冰); Kou, LZ; Lang, XL; Xia, JB; Wang, N; Qin, R; Lu, J; Xu, J; Liao, ZM; Zhang, XZ; Shan, XD; Song, XF; Gao, JY; Guo, WL; Yu, DP: “Electronic and Mechanical Coupling in Bent ZnO Nanowires”, Advanced Materials 2,4937(2009).
个人简介:
俞大鹏,男,1959年3月生。1993 年在法国南巴黎大学固体物理实验室(Orsay)获博士学位。2000年获得国家杰出青年科学基金,2002年获得教育部长江学者特聘教授,是教育部长江学者与创新计划 “新型低维功能结构与物理” 创新团队学术带头人,兼任中国电子显微镜学会、中国材料学会青年委员会常务理事等。俞大鹏教授的主要研究方向为准一维半导体纳米结构与物理性质研究,是国际纳米线研究的创始人之一,在纳米线的制备、物理性质和器件效应研究方面做出的主要学术贡献包括: 发展了催化诱导与气相输运新方法、新技术规模制备硅纳米线,基本解决自下而上可控制备纳米线的核心难题;开拓了氧化物纳米线材料新领域;深入、系统地研究了纳米线的奇特物理性质和应用基础。俞大鹏教授共在国际核心专业刊物上发表360多篇论文,含国际顶级专业刊物论文Physical Review B/Letters(14)、 Applied Physics Letters/JAP(75)、Advanced  Materials(11)、Nano Letters(7)等160余篇。相关论文被国内外其他同行累计引用超过10000次,H因子为54。以第一完成人获得了2004年度教育部提名自然科学一等奖、2007年获国家自然科学二等奖。担任Nano Research、《科学通讯》等国内外学术刊物编委,被邀请担任美国物理研究所(AIP)10 Year Review Committee Member(全球6名科学家)。
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