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报告题目:
材料院《材料科学论坛》:Control of magnetic anisotropy of the FeCoB and Heusler alloy films for high frequency and spintronic device applications
 报告人:
Prof. Shigeki Nakagawa
Dept. of Physical Electronics, Tokyo Institute of Technology
报告时间:
2015-05-19 10:30
报告地点:
清华大学材料学院学术报告厅(逸夫技术科学楼1-205)
主办单位:
材料院《材料科学论坛》联系人:宋成 老师 62781275
  简介:

Abstract
Control of magnetic anisotropy of the ferromagnetic films with high saturation magnetization, such as FeCoB films, is one of the key factors to apply them as high frequency devices for operation around 10 GHz. Addition of perpendicular magnetic anisotropy to the highly spin polarized half metallic films, such as Heusler alloy films, is also important to realize perpendicular magnetic tunneling junction (p-MTJ) with high MR ratio which is applicable for next generation MRAM. We have fabricated FeCoB/Ru bilayered films with high in-plane magnetic anisotropy of 500 Oe by oblique incidence sputtering method. X-ray diffraction analysis clarified that there is an anisotropic residual stress which was caused by the characteristic configuration of targets and substrate in our facing targets sputtering system. The resonance frequencies of the films exceed 9 GHz while they maintain high relative permeability. In order to add perpendicular magnetic anisotropy to full Heusler alloy thin films, such as Co2MnSi and Co2FeSi, multilayers composed of Pd insertion layer and bilayered structure with MgO films is effective to attain PMA which is applicable to MRAM devices. Technique to control magnetic anisotropy will be mentioned in this presentation.


---------------    PROFILE    ---------------

< Education >
Master of Engineering, Kanazawa University, Japan, 1986
Doctor of Engineering, Tokyo Institute of Technology, 1993
< Professional Career >
Assistant Prof., Tokyo Institute of Technology, 1986
Visiting Researcher, University of Minnesota, 1995
Associate Prof., Tokyo Institute of Technology, 1996
Professor, Tokyo Institute of Technology, 2011
< Major Research Theme >
- Preparation and characterization of magnetic thin films
- Magnetic thin film devices for perpendicular magnetic recording
- Spintronics devices
- Thin films of functional materials

Shigeki Nakagawa received B.S. and M.S degree in electrical engineering from Kanazawa University, Japan, in 1983 and 1985, respectively. He joined Tokyo Institute of Technology as a Research Associate of Department of Physical Electronics. He received Ph.D from Tokyo Institute of Technology in 1994. He joined to University of Minnesota as a Visiting Researcher in 1995. He promoted to Associate Professor in 1996. He is now Professor of the Department of Physical Electronics, Tokyo Institute of Technology. He engaged in research on magnetic thin films used in perpendicular magnetic recording and spintronics devices. He received the best paper awards at the 5th, 6th and 8th International Conference on Ferrites, and the best paper award of the Japan Society of Powder and Powder Metallurgy. Prof. Nakagawa was a chair of Japan chapter of IEEE Magnetics Society. He is a member of many academic societies, such as IEEE, the Japan Society of Applied Physics, the Institute of Electrical Engineers of Japan, the Magnetic Society of Japan, the Surface Finishing Society of Japan and the Japan Society of Powder and Powder Metallurgy.

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