简介: |
his talk clarifies and demystifies numerous ambiguities, misconceptions, and erroneous statements concerning memristors. Some fundamental circuit-theoretic-properties that will be proved include: all non-volatile resistive swiching memories are continuum, aka analog, memories. Non-volatile memristors do not have DC V-I curves. Non-volatile memristors may be used as resistive switched, or synapses. This talk presents a new fundamental and general theorem which asserts that all non-volatile resistive switching memories, aka memristors, must exhibit a flat power-off plot (POP), regardless of the device’s internal material and structure. The flat POP signature of non-volatility is essential for understanding and explaining practically all heretofore inexplicable empirical phenomena, such as why the conductance of all non-volatile memristors, including RRAM, Phase Change Memory, Ferro-electric Memory, Atomic Switch, etc., can be tuned continuously over a continuum range by applying voltage, or current, pulses of amplitude A and width w, provided A and w is greater than some positive constant K. In particular, this theorem implies that one can switch faster (smaller w) by increasing the pulse height A, independent of the device structure, or material. Numerous other widely observed but yet unexplained phenomena can also be easily explained. But most important, it can predict outcomes of gedanken experiments and help resolve future paradoxes involving non-volatile memristors.
Leon Chua is widely known for his invention of the Memristor and the Chua’s Circuit. His research has been recognized internationally through numerous major awards, including 16 honorary doctorates from major universities in Europe and Japan, and 7 USA patents, He was elected as Fellow of IEEE in 1974, a foreign member of the European Academy of Sciences (Academia Europea) in 1997, a foreign member of the Hungarian Academy of Sciences in 2007, and an honorary fellow of the Institute of Advanced Study at the Technical University of Munich, Germany in 2012. He was honored with many major prizes, including the Frederick Emmons Award in 1974, the IEEE Neural Networks Pioneer Award in 2000, the first IEEE Gustav Kirchhoff Award in 2005, the International Francqui Chair (Belgium) in 2006, the Guggenheim Fellow award in 2010, Leverhulme Professor Award (United Kingdom) during 2010-2011, and the EU Marie curie Fellow award, 2013.
讲座内容：
这次报告将会阐述和解释关于忆阻器的众多歧义、误解和错误的陈述。一些将被证明的基本的电路理论特性包括：
1) 所有的非挥发性电阻性开关存储器都是连续的、模拟的记忆系统
2) 非挥发性忆阻器没有直流伏安特性曲线。非挥发性忆阻器可以被用作电阻开关或突触。
这次报告将会介绍一个新的基本的和通用的理论，该理论认为所有的非挥发性电阻开关，也被称为忆阻器，必须具有平坦的断电特性，而与器件的内部材料和结构无关。
非挥发性的平坦的断电特性对于理解和解释之前凭经验无法解释的现象非常重要，比如为什么所有非挥发性忆阻器，包括RRAM，相变存储器，铁电存储器，原子开关等的导电性可以通过附加电压或电流及幅度为A，脉宽为w的脉冲（需要满足A和w大于正常数K）在连续范围内进行连续调节。特别地，这个理论表明，可以通过增加脉冲的高度A来提高开关速度，而与器件的结构和材料无关。很多其他被广泛观察到，但是还未解释的现象也可以很容易的得到解释。但是，最重要的是，该理论可以预测那些目前无法进行的实验的结果，并且帮助解决涉及非挥发性忆阻器的那些似是而非的理论。
主讲人简介：
Leon Chua以其发明的忆阻器和Chua氏电路而为人们所熟知。其研究成果获得众多专业奖项而为国际公认，获得包括在欧洲和日本主要大学的16个荣誉博士学位和7个美国专利。其在1974年当选为IEEE的Fellow，在1997年当选为欧洲科学院外籍院士，在2007成为匈牙利科学院外籍成员，并在2012年获得德国慕尼黑工业大学高等研究院荣誉研究员称号。其荣获许多大奖，包括于1974年获得Frederick Emmons奖，2000年获得IEEE Neural Networks Pioneer奖，2005年获得第一个IEEE Gustav Kirchhoff奖，2006年获得国际Francqui奖（比利时），2010获得Guggenheim Fellow奖，2010-2011年获得Leverhulme Professor奖（英国），和2013年获得欧盟Marie curie Fellow奖。
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