Bio of Dr. Jiro Kasahara

Jiro Kasahara received the B.S., M.S., and Dr. Eng. degree in electronics engineering from Waseda University, Tokyo Japan, in 1972, 1974, and 1983, respectively.

In 1974, he joined Sony Corporation Research Center, where he has worked on GaAs epitaxial growth by MOCVD.  From 1976 to 1977, he was at Stanford University, as a Research Associate, where he worked on ion implantation in InP.  Since coming back from Stanford, he engaged in the development of ion implantation in GaAs. During that time, he developed capless annealing of GaAs for applications to high-speed GaAs IC’s and MMIC’s which was successively brought into business by his responsibility particularly for the current mobile phone market.

From 1995 to 1999, he was responsible for the management of the Design Center in Basingstoke, UK followed by the head of system LSI business unit in Semiconductor Company, Tokyo Japan.

Recently, he has established Sony Fusion Domain Laboratory, Tokyo, Japan in 2001, where he has been responsible for the development of molecular electronics including organic semiconductors.

So far, he has published more than 100 papers and patents.